Plasmon-Induced Electron-Hole Separation at the Ag/TiO2(110) Interface.

Jie Ma1, Shiwu Gao2

  • 1Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics and Advanced Research Institute of Multidisciplinary Science , Beijing Institute of Technology , Beijing 100081 , China.

ACS Nano
|August 9, 2019
PubMed
Summary

This study reveals how plasmon excitation drives electron-hole separation at metal-semiconductor interfaces. Hot electrons facilitate charge injection, leading to spatial separation and influencing carrier distribution in TiO2 layers.

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