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Updated: Jan 21, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Publisher Correction: Tunnelling spectroscopy of gate-induced superconductivity in MoS2
Davide Costanzo1, Haijing Zhang1, Bojja Aditya Reddy1
1DQMP and GAP, Université de Genève, Geneva, Switzerland.
Abstract:
In the version of this Article originally published, an error during typesetting led to the curve in Fig. 2a being shifted to the right, and the curves in the inset of Fig. 2a being displaced. The figure has now been corrected in all versions of the Article; the original and corrected Fig. 2a are shown below.
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