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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Mitigating Meniscus Instabilities in Solution-Sheared Polymer Films for Organic Field-Effect Transistors
Cecilia Teixeira da Rocha, Ge Qu1, Xuegeng Yang2
1Department of Chemical and Biomolecular Engineering , University of Illinois Urbana-Champaign , 600 S. Mathews Avenue , Urbana , Illinois 61801 , United States.
Abstract:
Semiconducting donor-acceptor copolymers are considered to be a promising material class for solution-coated, large-scale organic electronic applications. A large number of works have shown that the best-performing organic field-effect transistors (OFETs) are obtained on low-surface-energy substrates. The meniscus instabilities that occur when coating on such surfaces considerably limit the effective deposition speeds. This represents a limiting factor for the upscaling of device fabrication for mass production, an issue that needs to be addressed if organic electronic devices are ever to become commercially relevant. In this work, we present a method to increase the accessible window of coating speeds for the solution shearing of donor-acceptor semiconductor polymers for the fabrication of OFETs. By incorporating a piezo crystal that is capable of producing high-frequency vibrations into the coating head, we are able to mitigate contact line instabilities due to the depinning of the contact line, thereby suppressing the commonly encountered "stick-and-slip" phenomenon.
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Shearing Stress
The average shearing stress can be calculated by dividing the shear by the area of the cross-section.

