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Non-volatile epsilon-near-zero readout memory.

Jorge Parra, Irene Olivares, Antoine Brimont

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    Summary
    This summary is machine-generated.

    Researchers developed a novel photonic memory using indium tin oxide for non-volatile data storage. This electronic memory offers optical readout, high extinction ratios, and predicted decade-long retention times.

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    Area of Science:

    • Photonics
    • Materials Science
    • Electrical Engineering

    Background:

    • Silicon photonics lacks inherent memory effects, hindering electronic data storage capabilities.
    • Existing photonic memory solutions face challenges in non-volatility and integration.

    Purpose of the Study:

    • To propose and demonstrate a non-volatile readout photonic memory device.
    • To overcome the limitations of silicon-based photonics for data storage applications.

    Main Methods:

    • Utilized indium tin oxide as a floating gate material.
    • Exploited the epsilon-near-zero (ENZ) regime and electro-optic activity of indium tin oxide.
    • Designed a photonic memory structure for electronic writing/erasing and optical readout.

    Main Results:

    • Achieved extinction ratios exceeding 10 dB over a 100 nm bandwidth.
    • Demonstrated a 5 μm long photonic memory device.
    • Predicted low power consumption (microwatts) and long retention times (approx. 10 years).

    Conclusions:

    • The proposed indium tin oxide-based photonic memory offers a viable solution for non-volatile data storage.
    • This technology paves the way for highly integrated electro-optic devices, including memory banks.
    • The device combines electronic control with optical readout for efficient data handling.