Electrically writable silicon nanophotonic resistive memory with inherent stochasticity

Area of Science:

• Photonics
• Nanotechnology
• Materials Science

Background:

• Resistive random-access memory (RRAM) is a promising non-volatile memory technology.
• Integrating optical readout capabilities into RRAM can offer advantages in speed and bandwidth.
• Silicon nanophotonic structures provide a platform for miniaturized optical devices.

Purpose of the Study:

• To propose and demonstrate an electrically writable resistive memory device with optical readout.
• To leverage the hybridization of optical and surface plasmonic modes for nanoscale optical confinement.
• To explore the potential of this device for neuromorphic computing applications.

Main Methods:

• Fabrication of a device comprising a 13 nm SiO2 layer sandwiched between p-type silicon and gold.
• Utilizing optical and surface plasmonic modes for enhanced light-matter interaction.
• Experimental demonstration of electrical write and optical readout functionalities at 1550 nm wavelength.

Main Results:

• Successful experimental demonstration of electrical write and optical readout with distinct hysteresis curves.
• Achieved a 10 dB on-off extinction ratio for a 5 mm device.
• Observed self-rectifying operation due to the p-silicon, SiO2, and gold combination.
• Demonstrated inherent stochastic properties for potential synaptic weight readout.

Conclusions:

• The proposed silicon nanophotonic device offers a novel approach to resistive memory with optical readout.
• The device exhibits promising characteristics for integration into memory stacks and neuromorphic systems.
• Hybrid optical-plasmonic modes are key to achieving efficient nanoscale optical confinement and memory detection.