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Low loss (Al)GaAs on an insulator waveguide platform.

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    We achieved low propagation loss in gallium arsenide and aluminum gallium arsenide on insulator waveguides. This breakthrough enables high-performance photonic integrated circuits for nonlinear and quantum applications.

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    Area of Science:

    • Photonics
    • Materials Science
    • Semiconductor Physics

    Background:

    • Integrated photonic circuits (PICs) are crucial for modern communication and computation.
    • III-V semiconductors offer unique optical properties but face challenges in integration.
    • Existing silicon-on-insulator (SOI) platforms have limitations in performance for advanced applications.

    Purpose of the Study:

    • To demonstrate a low-loss integrated platform using gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs) on insulator.
    • To achieve high quality factors and low propagation losses in these III-V on insulator waveguides.
    • To establish III-V on insulator as a competitive platform for future photonic integrated circuits.

    Main Methods:

    • Heterogeneous integration of GaAs and AlGaAs materials onto an insulator substrate.
    • Fabrication of optical resonators and waveguides on the integrated platform.
    • Characterization of resonator quality factors and waveguide propagation losses.

    Main Results:

    • Demonstrated record high quality factors for resonators, reaching up to 1.5×10^6.
    • Achieved a low propagation loss of approximately 0.4 dB/cm in the waveguides.
    • Attained loss levels comparable to established silicon-on-insulator waveguides for the first time.

    Conclusions:

    • The developed III-V on insulator platform offers significantly reduced optical loss.
    • This platform is a key enabling technology for advanced photonic integrated circuits.
    • It is poised to become a fundamental building block for nonlinear PICs and integrated quantum photonic systems.