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A Micropatterning Assay for Measuring Cell Chirality

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Chiral Domain Wall Injector Driven by Spin-Orbit Torques.

T Phuong Dao^1,2,3, Marvin Müller^1,4, Zhaochu Luo^2,3

¹Laboratory for Magnetism and Interface Physics, Department of Materials , ETH Zurich , 8093 Zurich , Switzerland.

|August 17, 2019

Summary

Researchers controlled magnetic domain wall injection using chiral coupling and spin-orbit torques. This enables efficient domain wall injection for advanced magnetic memory and logic devices.

Keywords:

Dzyaloshinskii-Moriya interaction Racetrack memory chiral coupling current-induced nucleation spin−orbit torques

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Area of Science:

Spintronics
Materials Science
Condensed Matter Physics

Background:

Magnetic domain walls are crucial for advanced memory and logic devices.
Controlled injection of domain walls is essential for device functionality.
Existing injection schemes often require high current densities.

Purpose of the Study:

To control domain wall injection into magnetic conduits using chiral coupling and spin-orbit torques.
To investigate the effect of Dzyaloshinskii-Moriya interaction on domain nucleation.
To demonstrate efficient domain wall injection at low current densities.

Main Methods:

Utilizing a Pt/Co/AlO_x trilayer exhibiting chiral coupling.
Employing current-driven spin-orbit torques for domain wall manipulation.
Investigating magnetic configurations stabilized by chiral coupling and opposite chirality.

Main Results:

Current-induced domain nucleation is inhibited for configurations stabilized by chiral coupling.
Domain wall injection is promoted for configurations with opposite chirality.
Efficient domain wall injection achieved at current densities of ~4 × 10¹¹ A m^-2.
Demonstrated controlled sequential domain creation in a racetrack structure using a chiral injector.

Conclusions:

Chiral coupling and spin-orbit torques offer effective control over domain wall injection.
The developed chiral domain wall injector enables efficient and precise magnetic domain manipulation.
This approach paves the way for low-power, high-performance magnetic memory and logic devices.