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Updated: Jan 20, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor

Hyeon-Jun Lee1, Katsumi Abe2, Hee Yeon Noh3

  • 1Intelligent Devices & Systems Research Group, Institute of Convergence, DGIST, Daegu, 42988, Korea. dear.hjlee@dgist.ac.kr.

Scientific Reports
|August 21, 2019
PubMed

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