Ultrathin Topological Insulator Absorber: Unique Dielectric Behavior of Bi₂Te₃ Nanosheets Based on Conducting Surface...

Topological insulators exhibit great potential in the fields of electronics and semiconductors for their gapless surface states. Intriguingly, most topological insulators are possibly excellent microwave-absorbing materials because of easy adjustment of electrical transport based on conducting surface states in the nanostructure. Herein, topological insulator Bi₂Te₃ nanosheets are synthesized by a simple solvothermal method. The material demonstrates a unique dielectric behavior based on conducting surface states, resulting in excellent microwave-absorbing performance. Benefiting from the outstanding impedance matching, Bi₂Te₃ nanosheets exhibit an ultrathin microwave absorption with the qualified frequency bandwidth of 3.0 GHz at only 0.77 mm thickness, which is thinner than other absorbers in reported references. Moreover, a strong reflection loss of -41 dB at 0.8 mm is achieved. The result provides a new approach for developing ultrathin microwave absorption materials at the submillimeter scale.