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Enhanced Electron Transportation by Dye Doping in Very Low-Temperature (<130 °C)-Processed Sol-Gel ZnO toward
Xinbo Wen1, Shaomao Fang1, Yucheng Xu1
1Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , P. R. China.
Abstract:
A perylene bisimide functionalized with four 4-carboxyphenoxy substituents at bay area (PBI-COOH) was embedded in sol-gel-derived zinc oxide (ZnO) to fabricate organic-inorganic hybrid photoconductive cathode interlayers (ZnO:PBI-COOH) that can be annealed at a rather low temperature of 120-130 °C as desired for plastic substrates for flexible devices. For these interlayers, the structural defects including oxygen vacancy and residual hydroxy groups are reduced that leads to increased electron mobility, and a photoinduced electron transfer from the organic dopant into the conduction band of ZnO endows the hybrid thin film with relatively higher conductivity when compared to the undoped ZnO thin film. The low-temperature-processed hybrid thin films were applied on indium tin oxide electrodes to produce inverted organic solar cells (OSCs) with power conversion efficiencies of 11.68 and 13.48% when using J71:ITIC and PBDB-T-2Cl:IT4F as active layers, respectively. Finally, flexible OSCs are fabricated on poly(ethylene terephthalate) substrates that maintained stability with relatively high performance after 100 times bending.
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