Related Experiment Video
Updated: Jan 20, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Phase-change heterostructure enables ultralow noise and drift for memory operation
Keyuan Ding1,2, Jiangjing Wang3,4, Yuxing Zhou3
1College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.
Abstract:
Artificial intelligence and other data-intensive applications have escalated the demand for data storage and processing. New computing devices, such as phase-change random access memory (PCRAM)-based neuro-inspired devices, are promising options for breaking the von Neumann barrier by unifying storage with computing in memory cells. However, current PCRAM devices have considerable noise and drift in electrical resistance that erodes the precision and consistency of these devices. We designed a phase-change heterostructure (PCH) that consists of alternately stacked phase-change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing. Our PCH architecture is amenable to industrial production as an intrinsic materials solution, without complex manufacturing procedure or much increased fabrication cost.
Related Concept Videos
Mutation, Gene Flow, and Genetic Drift
Instinctive Drift
Genetic Drift
Drift Velocity
Phase Transitions
Phase Diagrams

