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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Computer Engineering

Background:

  • Traditional integrated circuit (IC) design faces challenges migrating to three-dimensional integrated circuits (3D-ICs).
  • Through-silicon-vias (TSVs) in 3D-ICs are susceptible to latent defects like resistive opens and bridges due to thermal stress.
  • These defects degrade electrical performance by increasing resistance-capacitance (RC) delay, necessitating improved reliability and yield solutions.

Purpose of the Study:

  • To propose a new TSV test architecture for 3D-ICs.
  • To reduce test time, hardware overhead, and peak current consumption in TSV testing.
  • To enhance the reliability and yield of 3D-ICs by addressing latent defects.

Main Methods:

  • Developed a novel TSV test architecture for 3D-ICs.
  • Implemented a single test-clock-period approach to combine test results and defect type classification.
  • Introduced block-based concurrent testing to optimize test time by dividing the die into concurrent blocks.

Main Results:

  • The proposed architecture successfully transfers combined test output (test result and defect type) in a single test-clock-period.
  • Achieved substantial reductions in test time and hardware overhead.
  • Maintained reasonable peak power consumption suitable for mass production without compromising test quality.

Conclusions:

  • The novel TSV test architecture significantly improves the efficiency and cost-effectiveness of 3D-IC testing.
  • This approach offers a viable solution for enhancing the reliability and yield of 3D-ICs in mass production.
  • The method effectively addresses the challenges posed by latent defects in TSVs.