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Updated: Jan 20, 2026

Synthesis of Graphene Nanofluids with Controllable Flake Size Distributions
Published on: July 17, 2019
Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains
Li Lin1, Jiayu Li2,3,4, Qinghong Yuan5,6
1Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
This study presents a new method for growing nitrogen-doped graphene with high carrier mobility and low sheet resistance. This advancement enables scalable graphene electronics by minimizing scattering centers.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Heteroatom incorporation in graphene offers tunable electrical properties.
- Scattering centers from doping reduce carrier mobility and conductivity in graphene.
Purpose of the Study:
- To develop a method for growing high-mobility, doped graphene single crystals.
- To overcome limitations of reduced carrier mobility in doped graphene.
Main Methods:
- Rapid growth of graphitic nitrogen cluster-doped monolayer graphene on copper foil.
- Utilizing nitrogen-terminated carbon clusters to minimize carrier scattering.
- Employing oxygen etching to remove defective pyridinic nitrogen centers.
Main Results:
- Achieved remarkable carrier mobility of 13,000 cm² V⁻¹ s⁻¹.
- Obtained a significantly reduced sheet resistance of 130 ohms/square.
- Demonstrated high n-doping levels with suppressed carrier scattering.
Conclusions:
- Developed a scalable method for producing high-performance doped graphene.
- Nitrogen-terminated clusters and oxygen etching are key to high mobility.
- Opens avenues for advanced graphene-based electronic devices with tunable work functions.
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