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High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p-n Vertical Heterojunction
Yan Xiao1, Lin Liu2,3, Zhi-Hao Ma1
1Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Nanomaterials (Basel, Switzerland)
|August 29, 2019
Summary
This study introduces a novel self-powered ultraviolet photodetector (UV PD) using cobalt phthalocyanine and porous gallium nitride (GaN). The device demonstrates enhanced performance and stability, improving UV detection capabilities.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Gallium nitride (GaN) is a promising material for ultraviolet (UV) photodetectors (PDs) due to its wide bandgap and stability.
- Existing GaN-based UV PDs require performance enhancements in detectivity and sensitivity.
- Nanoporous structures and organic/inorganic hybrids are effective strategies for improving PD performance.
Purpose of the Study:
- To develop a novel self-powered UV PD using p-type cobalt phthalocyanine (CoPc) and n-type porous GaN.
- To construct a p-n vertical heterojunction for enhanced UV detection.
- To investigate the performance and stability of the fabricated CoPc/porous-GaN UV PD.
Main Methods:
- Fabrication of a p-n vertical heterojunction using p-type CoPc and n-type porous-GaN.
- Utilized thermal vapor deposition for constructing the heterojunction.
- Characterized the device performance under 365 nm light illumination.
Main Results:
- The CoPc/porous-GaN UV PD achieved a photoresponsivity of 588 mA/W, detectivity of 4.8 × 10^12 Jones, and a linear dynamic range of 79.5 dB.
- Performance metrics surpassed those of CoPc/flat-GaN based PDs.
- The device exhibited excellent stability, maintaining its photoelectrical properties and on/off switching behavior for over 3 months.
Conclusions:
- The enhanced performance is attributed to the built-in electric field at the CoPc/porous-GaN interface and the increased light absorptivity of the nanoporous GaN structure.
- The developed self-powered UV PD demonstrates significant potential for advanced UV detection applications.
- The CoPc/porous-GaN heterojunction offers a stable and high-performance solution for UV photodetectors.
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