Related Experiment Video
Updated: Jan 20, 2026

Formation of Thick Dense Yttrium Iron Garnet Films Using Aerosol Deposition
Published on: May 15, 2015
Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films
Aile Tamm1, Kristjan Kalam1, Helina Seemen1
1Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia.
Abstract:
Mixed films of a high-permittivity oxide, Er2O3, and a magnetic material, Fe2O3, were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films.
More Related Videos
12:05U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
Published on: February 21, 2019
14:01Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
Published on: May 22, 2015
Related Concept Videos
10:52Formation of Thick Dense Yttrium Iron Garnet Films Using Aerosol Deposition
12:05U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
14:01Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
08:23Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate
09:45Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
11:10Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model