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Updated: Jan 20, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Li Jiang1, Jinhua Li1, Kang Huang1
1Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
Researchers developed low-cost, solution-processable zinc oxide (ZnO) thin-film transistors (TFTs) using annealing temperatures under 300°C. These ZnO TFTs exhibit high electron mobility, outperforming many existing low-temperature fabrication methods.
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