Indium-Arsenic Molecules with an In≡As Triple Bond: A Theoretical Approach

The effect of substitution on the potential energy surfaces of RIn≡AsR (R = F, OH, H, CH₃, and SiH₃ and R' = SiMe(SitBu₃)₂, SiiPrDis₂, and N-heterocyclic carbene (NHC)) is determined using density functional theory calculations (M06-2X/Def2-TZVP, B3PW91/Def2-TZVP, and B3LYP/LANL2DZ+dp). The computational studies demonstrate that all of the triply bonded RIn≡AsR species prefer to adopt a bent geometry, which is consistent with the valence electron model. The theoretical studies show that RIn≡AsR molecules that have smaller substituents are kinetically unstable with respect to their intramolecular rearrangements. However, triply bonded R'In≡AsR' species that have bulkier substituents (R' = SiMe(SitBu₃)₂, SiiPrDis₂, and NHC) occupy minima on the singlet potential energy surface, and they are both kinetically and thermodynamically stable. That is, the electronic and steric effects of bulky substituents play an important role in making molecules that feature an In≡As triple bond viable as a synthetic target. Moreover, two valence bond models are used to interpret the bonding character of the In≡As triple bond. One is model [A], which is best represented as . This interprets the bonding conditions for RIn≡AsR molecules that feature small ligands. The other is model [B], which is best represented as . This explains the bonding character of RIn≡PAsR molecules that feature large substituents.