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Updated: Jan 20, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer
Sourav Roy1, Soumi Halder1, Michael G B Drew2
1Department of Chemistry, Inorganic Section and Department of Physics, Jadavpur University, Kolkata 700032, India.
Abstract:
A nickel(II)/lead(II) coordination polymer [(NCS)Pb(H2O)LNi(NCS)]n {H2L = N,N'-bis(3-methoxysalicylidene)propane-1,3-diamine} has been synthesized and characterized. The band gap (3.18 eV) calculated from Tauc's plot suggests the semiconducting nature of the complex. The material has a photosensitivity of 5.76, indicating its applicability in the fabrication of photosensitive devices. The complex has been successfully applied in a technologically challenging thin-film photosensitive Schottky device.
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