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Updated: Jan 20, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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Post-thermal-Induced Recrystallization in GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy with Near-Unity

Inah Yeo1, Kyung Soo Yi2, Eun Hye Lee1

  • 1Post-Silicon Semiconductor Institute and Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.

ACS Omega
|August 29, 2019
PubMed

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