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Breaking Molecular Nitrogen under Mild Conditions with an Atomically Clean Lanthanide Surface
Felicia Ullstad1, Gabriel Bioletti1, Jay R Chan1
1The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand.
Researchers demonstrate breaking molecular nitrogen (N2) using lanthanide films under mild conditions. This method enables lanthanide nitride thin film growth and shows reversible nitrogen incorporation.
Area of Science:
- Materials Science
- Inorganic Chemistry
- Surface Science
Background:
- Molecular nitrogen (N2) is abundant but inert, posing challenges for its chemical activation.
- Developing methods for nitrogen fixation under mild conditions is crucial for various industrial and environmental applications.
Purpose of the Study:
- To demonstrate a novel method for breaking molecular nitrogen (N2) under mild conditions.
- To investigate the growth and properties of lanthanide nitride thin films.
- To explore the reversibility of nitrogen incorporation into lanthanide nitrides.
Main Methods:
- Evaporation of lanthanides in a partial N2 atmosphere at room temperature and low pressure (10-4 Torr).
- X-ray diffraction (XRD) for structural confirmation of lanthanide nitride thin films.
- In situ conductance measurements to monitor surface and bulk reactions.
Main Results:
- Successful growth of lanthanide nitride thin films under mild conditions.
- Observation of immediate surface and slower bulk reactions upon exposure of lanthanide films to N2 gas.
- Demonstration of partial reversal of nitrogen incorporation by cycling vacuum and N2 conditions.
Conclusions:
- Lanthanide films can facilitate the cracking and incorporation of molecular nitrogen (N2) under mild conditions.
- The process allows for the synthesis of lanthanide nitride thin films with potential for reversible nitrogen storage.
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