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Updated: Jan 20, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Interfacial THz generation from graphene/Si mixed-dimensional van der Waals heterostructure
Zehan Yao1, Yuanyuan Huang1, Lipeng Zhu2
1Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China. xlxuphy@nwu.edu.cn.
A novel graphene/silicon Schottky junction enhances terahertz (THz) generation, overcoming silicon
Area of Science:
- Optoelectronics
- Terahertz (THz) Science
- Materials Science
Background:
- Silicon (Si) is a cost-effective semiconductor but an inefficient terahertz (THz) emitter due to low carrier drift velocity.
- Existing THz emitters face limitations in saturation and efficiency.
Purpose of the Study:
- To develop an effective method for enhancing THz generation using silicon.
- To investigate the properties of a graphene/Si Schottky junction (GSSJ) for THz emission.
Main Methods:
- Fabrication of a graphene/Si Schottky junction (GSSJ) by removing the native oxide on the Si surface.
- Excitation of the GSSJ with a femtosecond laser under electrical gating.
- Comparison of THz emission from GSSJ with InAs and GaAs.
Main Results:
- GSSJ demonstrates enhanced THz generation without rapid saturation and with high carrier drift velocity.
- THz emission amplitude increases with applied gate voltage.
- GSSJ exhibits stronger THz emission than InAs (100) and GaAs (100) under identical conditions.
Conclusions:
- Graphene/Si Schottky junctions offer an efficient route for THz generation.
- This approach overcomes the limitations of traditional silicon-based THz emitters.
- GSSJ can be utilized for probing mixed-dimensional van der Waals interfaces.
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