Probing the Field-Effect Transistor with Monolayer MoS₂ Prepared by APCVD

Area of Science:

• Materials Science
• Nanotechnology
• Solid State Physics

Background:

• Two-dimensional (2D) materials offer potential for miniaturizing transistors.
• Molybdenum disulfide (MoS2) is a promising 2D material for semiconductor applications.

Purpose of the Study:

• To synthesize and characterize monolayer MoS2.
• To fabricate and evaluate the electrical performance of field-effect transistors (FETs) using monolayer MoS2 as the channel material.

Main Methods:

• Atmospheric pressure chemical vapor deposition (APCVD) for MoS2 growth.
• Characterization using optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and field emission scanning electron microscopy (FESEM).
• Fabrication of back-gate FETs and testing of electrical characteristics.

Main Results:

• Monolayer MoS2 was successfully synthesized and confirmed.
• FETs exhibited a switching ratio of 10^3, field-effect mobility of 0.86 cm^2/Vs, saturation current of 2.75 × 10^-7 A/μm, and gate leakage current of 10^-12 A.
• Ohmic contact was achieved between monolayer MoS2 and Ti/Au electrodes.

Conclusions:

• The electrical performance of the fabricated MoS2-based FETs is currently limited, necessitating further optimization of MoS2 growth.
• The study provides insights for the future application of monolayer MoS2 FETs in low-power optoelectronic integrated circuits.