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Optical absorption of composition-tunable InGaAs nanowire arrays.

J Treu1, X Xu, K Ott

  • 1Walter Schottky Institut, Physik Department & Center for Nanotechnology and Nanomaterials, Technische Universität München, Garching, D-85748, Germany.

Nanotechnology
|August 31, 2019
PubMed
Summary
This summary is machine-generated.

Indium Gallium Arsenide (InGaAs) nanowire (NW) arrays show strong optical absorption. Geometric factors, like diameter, significantly impact InGaAs NW absorption more than composition changes.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Indium Gallium Arsenide (InGaAs) nanowire (NW) arrays are promising for photovoltaics and photodetectors due to their electronic properties and tunable band gaps.
  • Understanding their optical absorption is crucial for optimizing device performance.

Purpose of the Study:

  • To systematically investigate the optical absorption characteristics of composition-tunable vertical InGaAs NW arrays.
  • To determine the influence of composition (Ga-molar fraction) and geometry (diameter, period, fill factor) on optical generation rate and absorption spectra.

Main Methods:

  • Finite-difference time-domain (FDTD) simulations were used to model optical generation rates.
  • Spectrally resolved ultraviolet-visible-near-infrared (UV-vis-NIR) spectroscopy was employed to measure optical absorption on transferred NW arrays.

Main Results:

  • Simulations showed InGaAs NWs with diameters of 100-250 nm and moderate fill factors enhance generation rates compared to bulk materials.
  • Increased Ga-molar fraction requires adjusted geometry (smaller fill factors, larger diameters) to maintain high generation rates.
  • Experimental results indicated that NW diameter variations (< ±20 nm) strongly affect absorption spectra, causing shifts > 700 meV, while composition changes (0 < x(Ga) < 0.5) had negligible influence.

Conclusions:

  • Optical absorption in InGaAs NW arrays is significantly more sensitive to geometric parameters than to electronic band gap variations.
  • Precise control over NW diameter is critical for tuning optical absorption in InGaAs NW-based devices.