Defect-Cluster-Boosted Solar Photoelectrochemical Water Splitting by n-Cu₂ O Thin Films Prepared Through Anisotropic...

Anisotropic growth of Cu₂ O crystals deposited on an indium-doped tin oxide-coated glass substrate through facile electrodeposition and low-temperature calcination results in favorable solar photoelectrochemical water splitting. XRD, TEM, and SEM reveal that appreciable oxygen vacancies are populated in the Cu₂ O crystals with a highly branched dendritic thin film morphology, which are further substituted by Cu atoms to form Cu antisite defects exclusively along the [111] direction. The post-thermal treatment presumably accelerates such migration of the lattice imperfections, favoring the exposure of the catalytically active (111) facets. The Cu₂ O thin film derived in this way shows n-type conduction with a donor concentration in the order of 10¹⁷  cm^-3 and a flat-band potential of -1.19 V vs. Ag/AgCl, which is also confirmed by Mott-Schottky analysis. The material is employed as a photoanode and delivers a photocurrent density of 2.2 mA cm^-2 at a potential of 0.3 V vs. Ag/AgCl, surpassing reported values more than twofold. Such superiority mostly originates from the synergism of the selective facet exposure within the Cu₂ O crystals, which have decent crystallinity, as shown by Raman and photoluminescence spectroscopy, and a favorable bandgap of 2.1 eV, as confirmed by UV/Vis spectroscopy. The n-type Cu₂ O thin film reported herein holds excellent promise for solar-related applications.