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Updated: Jan 20, 2026
Focused Ion Beams FIB-SEM: Milling and Imaging
Published on: April 30, 2023
On the resolution of EBSD across atomic density and accelerating voltage with a particular focus on the light metal
Abhishek Tripathi1, Stefan Zaefferer1
1Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237, Düsseldorf, Germany.
Abstract:
We measured the physical lateral resolution of the electron backscatter diffraction (EBSD) technique for the case of pure magnesium and tungsten and compared these data with other values from literature. Spatial resolution, among other parameters, depends significantly on the accelerating voltage and the atomic number of the material. For the case of lighter metals, it is supposed to be lower than in the case of heavier metals for a given accelerating voltage. In the present work, lateral resolution was measured in dependence of accelerating voltage on a straight high angle grain boundary which was positioned parallel (horizontal boundary) and perpendicular (vertical boundary) to the tilt axis of the specimen. For magnesium the best lateral resolution of 240 nm was obtained at an accelerating voltage of 5 kV. The resolution dramatically worsened to values as high as 3500 nm as the voltage was increased from 15 kV to 30 kV. The aspect ratio of horizontal and vertical lateral resolution tended to 1.0 at the accelerating voltage of 5 kV and to 2.5 at the accelerating voltage of 30 kV. These values as function of accelerating voltages were compared with those obtained on the high atomic number metal tungsten. Here resolution at 5 kV was about a quarter of that of magnesium. With increasing voltage, the value almost didn't change. For all voltages the resolution aspect ratio stayed close to 1.0.
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