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Related Concept Videos

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The Organic Electrochemical Transistor is integrated with live cells and used to monitor ion flux across the gastrointestinal epithelial barrier. In this study, an increase in ion flux, related to disruption of tight junctions, induced by the presence of the calcium chelator EGTA (ethylene glycol-bis(beta-aminoethyl ether)-N,N,N',N'-tetra acetic acid), is...
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This protocol describes the fabrication of a one-piece indium-tin-oxide (ITO)-based ion-sensitive field-effect transistor (ISFET), which can be constructed as a solution-gated FET sensor (e.g., pH sensor) using a short and simple process (approximately half a day). This one-piece ITO-ISFET can also be applied to...
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Related Experiment Video

Updated: Jan 20, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
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A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction.

Kun Yang1, Hongxia Liu2, Shulong Wang3

  • 1Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.

Nanomaterials (Basel, Switzerland)
|September 5, 2019
PubMed
Summary

Researchers developed a new horizontal-gate monolayer MoS2 transistor that improves integration and performance. This design reduces the Schottky barrier, enhancing device characteristics for advanced two-dimensional electronics.

Keywords:
MoS2barrier reductionhorizontal gateimage forcetransistor

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Transition metal dichalcogenides (TMDCs) are promising semiconductors but face challenges like low carrier mobility and complex fabrication.
  • Existing research often involves intricate processes hindering device integration.
  • Improving contact characteristics between metals and 2D materials is crucial for device performance.

Purpose of the Study:

  • To propose a novel horizontal-gate transistor structure for enhanced integration of two-dimensional (2D) materials.
  • To investigate methods for overcoming limitations in TMDC-based devices, such as mobility and fabrication complexity.
  • To understand the impact of Schottky barrier height on device performance.

Main Methods:

  • Fabrication of a horizontal-gate monolayer MoS2 transistor with the gate coplanar to source and drain.
  • Utilizing the Y-Function method (YFM) for device characterization.
  • Employing a proposed diode equivalent model to analyze current variations.

Main Results:

  • Achieved on-off ratios comparable to back-gated transistors, reaching up to 1 × 10^4.
  • Demonstrated that Schottky barrier height reduction is the primary cause of source-drain current variations.
  • Verified the effectiveness of the proposed device structure in improving integration.

Conclusions:

  • The horizontal-gate structure offers a new pathway for high integration of 2D electronic devices.
  • The study provides insights into the contact characteristics between metals and 2D materials.
  • This work contributes to overcoming fabrication complexities and performance limitations in TMDC transistors.