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Unrestricted Electron Bunching at the Helical Edge.

Pavel D Kurilovich1, Vladislav D Kurilovich1, Igor S Burmistrov2

  • 1Department of Physics, Yale University, New Haven, Connecticut 06520, USA.

Physical Review Letters
|September 7, 2019
PubMed
Summary

We investigated quantum magnetic impurities at topological insulator edges. For spin S>1/2, electron bunching leads to large Fano factors, while S=1/2 shows a bounded Fano factor between 1 and 2.

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Area of Science:

  • Condensed matter physics
  • Quantum phenomena
  • Spintronics

Background:

  • Topological insulators possess unique edge states protected by time-reversal symmetry.
  • Quantum magnetic impurities can introduce novel electronic behaviors at these edges.
  • Backscattering in quantum systems is a key phenomenon affecting charge transport.

Purpose of the Study:

  • To analyze the shot noise of backscattering current induced by a quantum magnetic impurity of arbitrary spin S.
  • To determine the behavior of the Fano factor for different spin values.
  • To provide a comprehensive analytical solution for the shot noise properties.

Main Methods:

  • Full analytical solution derived for the shot noise.
  • Investigation of backscattering current at the edge of a 2D time-reversal invariant topological insulator.
  • Mathematical analysis of the Fano factor for arbitrary spin S.

Main Results:

  • For spin S > 1/2, the Fano factor can become arbitrarily large, indicating electron bunching.
  • For spin S = 1/2, the Fano factor is rigorously proven to be bounded between 1 and 2.
  • The study generalizes and extends previous findings on Fano factor behavior.

Conclusions:

  • The spin of the quantum magnetic impurity critically influences the nature of backscattering and electron transport.
  • The Fano factor serves as a sensitive probe of electron correlations and bunching phenomena.
  • This work offers a detailed theoretical understanding of shot noise in topological insulator edge states with magnetic impurities.