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Related Concept Videos

Solution Composition During Acid/Base Titrations01:17

Solution Composition During Acid/Base Titrations

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The titration of a weak acid with a strong base results in the formation of water and the conjugate base of the acid. For instance, titrating acetic acid with sodium hydroxide leads to the formation of water and sodium acetate. A solution of acetic acid and sodium acetate constitutes a buffer whose relative concentration at different stages of the titration is indicated by the α values, which represent percentages of the weak acid and its conjugate base.
The α0 and α1 values...
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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing10:45

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This protocol describes the fabrication of a one-piece indium-tin-oxide (ITO)-based ion-sensitive field-effect transistor (ISFET), which can be constructed as a solution-gated FET sensor (e.g., pH sensor) using a short and simple process (approximately half a day). This one-piece ITO-ISFET can also be applied to...
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device...
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Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors08:26

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A basic protocol for fabricating high-transconductance Melanin/PEDOT:PSS organic electrochemical transistors (OECTs) using spray coating is described. The method allows precise control over film deposition, thickness, and morphology, providing reproducible devices for sustainable and scalable bioelectronic...
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Determining the Mass Percent Composition in an Aqueous Solution07:30

Determining the Mass Percent Composition in an Aqueous Solution

388.7K
Source: Laboratory of Dr. Neal Abrams — SUNY College of Environmental Science and Forestry
Determining the composition of a solution is an important analytical and forensic technique. When solutions are made with water, they are referred to as being aqueous, or containing water. The primary component of a solution is referred to as the solvent, and the dissolved minor component is called the solute. The solute is dissolved in the solvent to make a solution. Water is the most common...
388.7K
Composition of Polyprotic Acid Solutions as a Function of pH01:19

Composition of Polyprotic Acid Solutions as a Function of pH

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Polyprotic acids of the type H2M constitute two ionizable protons. As a result, on titration with a base, they exhibit two equivalence points in the titration curve. During titration, the species H2M, HM−, and M2− will be present in the solution at different points. The fractions of H2M, HM−, and M2− present at the various instances of the titration are denoted by α0, α1, and α2, respectively.
A graph with the alpha values is plotted against the volume of...
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Related Experiment Video

Updated: Jan 19, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

669

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors.

Marco Moreira1, Emanuel Carlos1, Carlos Dias1

  • 1i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal.

Nanomaterials (Basel, Switzerland)
|September 11, 2019
PubMed
Summary
This summary is machine-generated.

Solution-processed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) show enhanced electrical properties. Optimized a-IGZO TFTs with a high-к dielectric demonstrate potential for low-cost flexible electronics.

Keywords:
IGZO compositionlow voltage operationsolution combustion synthesistransparent amorphous semiconductor oxides

More Related Videos

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Solution Composition During Acid/Base Titrations
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Solution Composition During Acid/Base Titrations

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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Solution Composition During Acid/Base Titrations
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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Solution-processed metal oxides offer a low-cost alternative to vacuum-deposited oxides for flexible electronics.
  • Amorphous indium-gallium-zinc oxide (a-IGZO) is a leading transparent semiconductor for thin-film transistors (TFTs) but requires property enhancement for industrial use.

Purpose of the Study:

  • To evaluate the impact of composition, thickness, and aging on the electrical characteristics of solution-processed a-IGZO TFTs.
  • To optimize a-IGZO TFTs for improved performance in low-voltage applications.

Main Methods:

  • Utilized solution combustion synthesis with urea as fuel to prepare amorphous indium-gallium-zinc oxide (a-IGZO).
  • Fabricated TFTs using optimized a-IGZO active layers and a solution-processed aluminum oxide (AlOx) high-к dielectric.
  • Implemented back-surface passivation for enhanced device stability.

Main Results:

  • Achieved a saturation mobility of 3.2 cm2 V-1 s-1.
  • Obtained a high on/off current ratio (IOn/IOff) of 106.
  • Demonstrated a low subthreshold swing (SS) of 73 mV dec-1 and a turn-on voltage (VOn) of 0.18 V.

Conclusions:

  • Optimized solution-processed a-IGZO TFTs exhibit excellent electrical properties, including high mobility and on/off ratio.
  • The developed TFTs are suitable for low-voltage operation, showing promise for cost-effective flexible electronic circuits.
  • Back-surface passivation and high-к dielectric integration are effective strategies for enhancing device performance and stability.