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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials04:57

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Current-induced magnetization switching in all-oxide heterostructures.

Liang Liu1, Qing Qin1, Weinan Lin1

  • 1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.

Nature Nanotechnology
|September 11, 2019
PubMed
Summary

Researchers demonstrate all-oxide spin-orbit torque (SOT) devices for low-power magnetic memory. They achieved magnetic-field-free switching in SrIrO3/SrRuO3 bilayers by engineering magnetocrystalline anisotropy.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Spintronics

Background:

  • Spin-orbit torque (SOT) enables electrical switching of magnetization, crucial for advanced memory technologies.
  • Strong spin-orbit coupling materials like heavy metals and topological insulators convert charge current to spin current.
  • This spin current exerts torque on adjacent magnetic layers, reversing magnetization.

Purpose of the Study:

  • To demonstrate novel all-oxide SOT devices for potential use in information technologies.
  • To investigate current-induced magnetization switching in SrIrO3/SrRuO3 heterostructures.
  • To explore the role of magnetocrystalline anisotropy in SOT switching behavior.

Main Methods:

  • Fabrication of SrIrO3/SrRuO3 all-oxide bilayers on SrTiO3 (STO) substrates with varying crystallographic orientations (001 and 110).
  • Characterization of current-induced magnetization switching.
  • Tuning of magnetocrystalline anisotropy by substrate orientation to control SOT switching.

Main Results:

  • Successful demonstration of current-induced magnetization switching in the all-oxide SrIrO3/SrRuO3 system.
  • Achieved magnetic-field-free switching in bilayers on STO(001) substrates, robust up to 100 mT.
  • Quantified charge-to-spin conversion efficiency between 0.58 and 0.86 for bilayers on STO(110), dependent on current direction.

Conclusions:

  • All-oxide SOT devices offer a promising platform for spintronic applications.
  • Magnetocrystalline anisotropy engineering is a viable strategy for achieving field-free SOT switching.
  • These findings pave the way for developing next-generation low-power magnetic memory.