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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Liang Liu1, Qing Qin1, Weinan Lin1
1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
Researchers demonstrate all-oxide spin-orbit torque (SOT) devices for low-power magnetic memory. They achieved magnetic-field-free switching in SrIrO3/SrRuO3 bilayers by engineering magnetocrystalline anisotropy.
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