Electroluminescence from h-BN by using Al₂O₃/h-BN multiple heterostructure

Area of Science:

• Materials Science
• Condensed Matter Physics
• Optoelectronics

Background:

• Two-dimensional hexagonal boron nitride (h-BN) is a promising material for optoelectronics due to its wide bandgap.
• Developing electrically-driven light emitters from h-BN is challenging.

Purpose of the Study:

• To achieve electrically-driven visible light emission from few-layer h-BN.
• To investigate the role of heterostructures in enhancing light emission efficiency.

Main Methods:

• Fabrication of a five-period Al2O3/h-BN multiple heterostructure with a graphene top electrode.
• Characterization of electrical properties and investigation of carrier confinement and recombination mechanisms.

Main Results:

• Demonstrated electrically-driven visible light emission from few-layer h-BN.
• Observed a red-shift in emission with increasing electric field.
• Al2O3 layers confined carriers and suppressed breakdown via trap-assisted tunneling, enhancing radiative recombination.

Conclusions:

• The Al2O3/h-BN multiple heterostructure is a viable platform for efficient, electrically-driven light emitters.
• This work paves the way for practical applications of wide bandgap 2-D materials in optoelectronics.