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Semiconductors12:36

Semiconductors

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Source: Derek Wilson, Asantha Cooray, PhD, Department of Physics & Astronomy, School of Physical Sciences, University of California, Irvine, CA
Semiconductors are materials whose ability to conduct an electrical current depends strongly on their temperature and level of impurity. The most common type of semiconductor material is crystalline silicon. Most pure semiconductors are not outstanding conductors; to improve conductivity, a pure semiconductor is often combined or...
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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
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Semiconductors and Characteristics of P-N Junctions
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Two dimensional ferromagnetic semiconductor: monolayer CrGeS3.

Yulu Ren1, Yanfeng Ge1, Wenhui Wan1

  • 1State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|September 12, 2019
PubMed
Summary

Monolayer CrGeS3 exhibits a ferromagnetic ground state with a Curie temperature of 161 K, making it a promising material for spintronic devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Chemistry

Background:

  • Two-dimensional (2D) ferromagnetic semiconductors are crucial for advancing spintronic devices.
  • Exploring novel 2D materials with tailored magnetic and electronic properties is essential.

Purpose of the Study:

  • To investigate the magnetic and electronic properties of monolayer Chromium Germanium Trisulfide (CrGeS3).
  • To determine the ground state magnetic ordering and potential for spintronic applications.

Main Methods:

  • Density Functional Theory (DFT) calculations were employed.
  • Analysis of electronic band structure, exchange splitting, and total energies for different magnetic configurations.
  • Mean-field theory was used to estimate the Curie temperature.

Main Results:

  • Monolayer CrGeS3 exhibits distinct spin-up (1.01 eV) and spin-down (1.07 eV) bandgaps.
  • Significant exchange splitting (0.67 eV, 2.21 eV with HSE06) arises from Cr-S and Cr-Ge hybridized states.
  • A ferromagnetic ground state was confirmed with a magnetic moment of 6 μB per unit cell.
  • An estimated Curie temperature of 161 K suggests robust ferromagnetism.

Conclusions:

  • Monolayer CrGeS3 is a promising 2D ferromagnetic semiconductor.
  • Its electronic and magnetic properties are suitable for nanoscale spintronic applications.