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Related Experiment Video

Updated: Jan 19, 2026

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High-speed double layer graphene electro-absorption modulator on SOI waveguide.

Marco A Giambra, Vito Sorianello, Vaidotas Miseikis

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    We developed a high-speed graphene electro-absorption modulator (EAM) for C-band applications. This silicon photonics device achieves 29GHz bandwidth, demonstrating graphene

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    Area of Science:

    • Photonics and optoelectronics
    • Materials science
    • Electrical engineering

    Background:

    • Silicon photonics is a key technology for high-speed optical communication.
    • Graphene electro-absorption modulators (EAMs) offer potential for high-speed modulation due to their unique electronic properties.
    • Integrating high-quality graphene onto silicon photonics platforms remains a challenge.

    Purpose of the Study:

    • To demonstrate a high-speed, double-layer graphene EAM operating in the C-band on a passive silicon-on-insulator (SOI) platform.
    • To investigate the performance of graphene EAMs at various data rates.
    • To assess the scalability and competitiveness of graphene for future photonic integrated circuits.

    Main Methods:

    • Fabrication of a double-layer graphene EAM using chemical vapor deposition (CVD) graphene.
    • Integration of pre-patterned single-crystal graphene onto a passive SOI platform using a wafer-scale transfer method.
    • Characterization of the device's 3dB bandwidth and non-return-to-zero (NRZ) eye-diagram extinction ratios at data rates up to 50 Gb/s.

    Main Results:

    • Achieved a 3dB bandwidth of 29 GHz.
    • Observed NRZ eye-diagram extinction ratios from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s.
    • Demonstrated low contact resistance due to high-quality graphene integration.

    Conclusions:

    • The developed graphene EAM exhibits high-speed modulation capabilities suitable for C-band optical communication.
    • The wafer-scale integration method enables the use of high-quality, scalable graphene in silicon photonics.
    • Graphene shows promise as a competitive technology for high-performance photonic devices.