Homogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications

ZnO is a promising short-wavelength light-emitting materials for its wide bandgap (3.37 eV) and large exciton binding energy (∼60 meV), however, practical p-type doped ZnO is the main challenge in this field. Here, Blue light-emitting diodes (LEDs) based on the homogeneous junctions of Sb doped ZnO nanowire arrays grown on Ga doped ZnO single crystal substrate are fabricated. Element analysis, FET and Hall-effect measurements demonstrate that the Sb atom has been successfully doped into ZnO nanowires to from p-type conductivity. On the benefit of high quality of nano-size homojunction, the fabricated LED shows low turn-on voltage turn-on voltage as low as 3.4 V and strong blue emission peak located at 425 nm at room temperature, which originate from interfacial recombination of ZnO nanowire p-n homojunctions. The present blue LED based on ZnO material may have potential applications in short-wavelength optoelectronic devices.