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Related Concept Videos

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Related Experiment Video

Updated: Jan 19, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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One-Dimensional Edge Contacts to a Monolayer Semiconductor.

Achint Jain1, Áron Szabó2, Markus Parzefall1

  • 1Photonics Laboratory , ETH Zürich , 8093 Zürich , Switzerland.

Nano Letters
|September 13, 2019
PubMed
Summary

Researchers developed a scalable method for edge contacts on 2D semiconductors like molybdenum disulfide (MoS2). This breakthrough enables efficient electrical access to encapsulated materials, crucial for advanced electronic devices.

Keywords:
2D materialsTMDCsedge contactsencapsulationheterostructures

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Electrical contact integration is vital for van der Waals (vdW) heterostructures in electronics and optoelectronics.
  • Scalable methods for accessing buried monolayer 2D semiconductors are currently lacking.

Purpose of the Study:

  • To develop a scalable methodology for creating edge electrical contacts to hexagonal boron nitride (hBN) encapsulated monolayer molybdenum disulfide (MoS2).
  • To evaluate the performance of these edge contacts in terms of contact resistance, carrier mobility, and current density.

Main Methods:

  • Combination of reactive ion etching, in situ Ar+ sputtering, and annealing.
  • Fabrication of edge contacts on hBN-encapsulated monolayer MoS2.

Main Results:

  • Achieved relatively low edge contact resistance, comparable to top contacts.
  • Demonstrated high carrier mobility (up to ~30 cm2 V-1 s-1) and on-current density (>50 μA/μm).
  • Preserved intrinsic MoS2 channel quality, resulting in a steep subthreshold swing (116 mV/dec) and negligible hysteresis.

Conclusions:

  • Edge contacts offer a viable and scalable solution for electrical access to encapsulated 2D semiconductors.
  • This method is highly promising for large-scale implementation of vdW heterostructure devices, particularly those using air-sensitive materials.
  • The ability to create arbitrarily narrow edge contacts facilitates further miniaturization of 2D electronic devices.