A kinetic model of diode detector response to pulsed radiation beams

Diodes dosimeters present a complex response to pulsed beams, with diode sensitivity varying with dose-per-pulse, monitor unit rate (time between pulses) or number of integrated pulses. Such a response is caused by the complex kinetics of the interplay among charge carriers, recombination-generation centers, which capture excess minority charge carriers and facilitate recombination with a majority charge carrier, and traps with energy levels close to the conduction/valence band, which can trap and release charge carriers. This behavior has been well characterized experimentally, and modeled with phenomenological models. In this work we present a kinetic multi-compartment model of the response of diode detectors, which includes the interplay among charge carriers, recombination-generation centers, and traps. The model can qualitatively fit experimental data extracted from the literature on diode response versus dose-per-pulse, monitor unit rate (time between pulses), or number of integrated pulses. In this regard, our work provides further insight on the response of diode detectors, and a theoretical framework for the development of simple phenomenological models.