Related Experiment Video
Updated: Jan 19, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Electrically Tunable Flat Bands and Magnetism in Twisted Bilayer Graphene
T M R Wolf1, J L Lado1, G Blatter1
1Institute for Theoretical Physics, ETH Zurich, 8093 Zurich, Switzerland.
Abstract:
Twisted graphene bilayers provide a versatile platform to engineer metamaterials with novel emergent properties by exploiting the resulting geometric moiré superlattice. Such superlattices are known to host bulk valley currents at tiny angles (α≈0.3°) and flat bands at magic angles (α≈1°). We show that tuning the twist angle to α^{*}≈0.8° generates flat bands away from charge neutrality with a triangular superlattice periodicity. When doped with ±6 electrons per moiré cell, these bands are half-filled and electronic interactions produce a symmetry-broken ground state (Stoner instability) with spin-polarized regions that order ferromagnetically. Application of an interlayer electric field breaks inversion symmetry and introduces valley-dependent dispersion that quenches the magnetic order. With these results, we propose a solid-state platform that realizes electrically tunable strong correlations.
Related Concept Videos
11:42Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:41Magnetic Tweezers for the Measurement of Twist and Torque
07:51Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
10:23Synthesis and Functionalization of 3D Nano-graphene Materials: Graphene Aerogels and Graphene Macro Assemblies
11:24Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...

