Related Experiment Video
Updated: Jan 19, 2026

Preparation of Carbon Nanosheets at Room Temperature
Published on: March 8, 2016
Ultra-thin Ga nanosheets: analogues of high pressure Ga(iii)
Yaqi Li1, Jingwei Zhang1, Fanxing Yin1
1School of Physics, Beihang University, Beijing 100191, P. R. China.
Abstract:
Ultra-thin Ga islands of β-Ga(110), high-pressure phase Ga(iii) and a new phase of stripe superstructure are obtained on Si(111). STM combined with theoretical calculations suggests that the stripe superstructure originates from Ga(iii) (001) with stacking rearrangement. This work provides a new strategy for synthesizing low-dimensional nanomaterials and accessing high pressure phases.
Related Concept Videos
10:44Preparation of Carbon Nanosheets at Room Temperature
11:22Investigations on the Ga(III) Complex of EOB-DTPA and Its 68Ga Radiolabeled Analogue
05:04Determining the Mechanical Strength of Ultra-Fine-Grained Metals
07:26Synthesis and Microdiffraction at Extreme Pressures and Temperatures
09:27Rapid One-step Enzymatic Synthesis and All-aqueous Purification of Trehalose Analogues
10:41Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol

