Analysis of Orthogonal Coupling Structure Based on Double Three-Contact Vertical Hall Device

Area of Science:

• * Semiconductor device physics
• * Sensor technology
• * Materials science

Background:

• * Vertical Hall devices are crucial for 3D Hall sensors detecting in-plane magnetic fields.
• * Existing vertical Hall devices suffer from high offset voltage and low sensitivity.
• * Addressing these limitations is key for advanced magnetic field sensing applications.

Purpose of the Study:

• * To propose a novel double three-contact vertical Hall device design.
• * To develop a conformal mapping analysis for sensitivity enhancement.
• * To introduce an orthogonal coupling structure for offset voltage reduction.

Main Methods:

• * Design and simulation of a double three-contact vertical Hall device.
• * Application of conformal mapping analysis for device optimization.
• * Implementation of an orthogonal coupling structure using two device sets.
• * Performance evaluation using TCAD simulation software.

Main Results:

• * The proposed orthogonal coupling structure achieved an average voltage sensitivity of 17.5222 mV/VT.
• * The average offset voltage was significantly reduced to approximately 0.075 mV.
• * The structure demonstrated consistent offset voltage magnitude across rotating current phases, aiding signal processing.

Conclusions:

• * The novel double three-contact vertical Hall device with an orthogonal coupling structure effectively minimizes offset voltage.
• * The proposed design offers improved sensitivity compared to existing vertical Hall devices.
• * This advancement facilitates more accurate magnetic field detection in 3D Hall sensors.