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Differential electron scattering cross-sections at low electron energies: The influence of screening parameter
M Čalkovský1, E Müller2, M Hugenschmidt1
13DMM2O - Cluster of Excellence (EXC-2082/1 - 390761711), Karlsruhe Institute of Technologie (KIT), 76131 Karlsruhe, Germany; Laboratory for Electron Microscopy, Karlsruhe Institute of Technology (KIT), Engesserst. 7, 76131 Karlsruhe, Germany.
Abstract:
For quantitative electron microscopy the comparison of measured and simulated data is essential. Monte Carlo (MC) simulations are well established to calculate the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) intensities on a non-atomic scale. In this work we focus on the importance of the screening parameter in differential screened Rutherford cross-sections for MC simulations and on the contribution of the screening parameter to the atomic-number dependence of the HAADF-STEM intensity at electron energies ≤ 30 keV. Materials investigated were chosen to cover a wide range of atomic numbers Z to study the Z dependence of the screening parameter. Comparison of measured and simulated HAADF-STEM intensities with different screening parameters known from the literature were tested and failed to generally describe the experimental data. Hence, the screening parameter was adapted to obtain the best match between experimental and MC-simulated HAADF-STEM intensities. The Z dependence of the HAADF-STEM intensity was derived.
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