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Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques.

Atif A Khan1, M Herrera1, N Fernández-Delgado1

  • 1Department of Material Science, Metallurgical Chemistry and Inorganic Chemistry, IMEYMAT, University of Cádiz, E-11510 Puerto Real, Spain.

Nanotechnology
|September 25, 2019
PubMed
Summary
This summary is machine-generated.

Sub-monolayer (SML) InSb/InAs nanostructures show improved performance. Transmission electron microscopy revealed a continuous InSbAs layer with Sb-rich agglomerates, indicating significant Sb segregation during growth.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Sub-monolayer (SML) InSb/InAs nanostructures offer advantages over Stranski-Krastanov counterparts.
  • These include sharper emission spectra, enhanced modal gain, and larger modulation bandwidth.

Purpose of the Study:

  • To analyze the antimony (Sb) distribution in SML InSb layers grown by migration-enhanced epitaxy.
  • To understand the segregation behavior of Sb during the growth of InSb/InAs nanostructures.

Main Methods:

  • Transmission electron microscopy (TEM) techniques were employed.
  • Analysis included 002 dark field imaging and atomic column-resolved high-angle annular dark-field scanning TEM (HAADF-STEM).
  • The Muraki segregation model was used to quantify Sb segregation.

Main Results:

  • A continuous InSbAs layer with low Sb content was observed.
  • Scarce Sb-rich InSbAs agglomerates were present.
  • A high Sb segregation coefficient (R = 0.81) towards the growth direction was quantified, indicating significant Sb segregation.

Conclusions:

  • Sb segregation during the growth of SML InSb/InAs nanostructures is a significant phenomenon.
  • The formation of a continuous InSbAs wetting layer is a result of SML Sb deposition on InAs.
  • Understanding this segregation is crucial for optimizing SML nanostructure properties.