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Updated: Jan 19, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Lattice-Mismatched PbTe/ZnTe Heterostructure with High-Speed Midinfrared Photoresponses
Songsong Ma1, Kai Li1, Hanlun Xu1
1Department of Physics, State Key Laboratory for Silicon Materials , Zhejiang University , Hangzhou 310027 , China.
Abstract:
In this work, a novel heterostructure consisting of different lattice structures with zincblende ZnTe and rock-salt PbTe is proposed. The PbTe/ZnTe heterostructures are grown by molecular beam epitaxy. Type-I band alignment at the PbTe/ZnTe heterointerface is revealed by X-ray photoelectron spectroscopy. The interface of the heterostructure exhibits exotic electrical properties. The novel heterostructure is then implemented to develop high-performance mid-infrared photodetectors which demonstrate pronounced responsivity, swift response speed, and high detectivity. The new photodetectors utilize the lateral photovoltaic effect which facilitates the understanding of the novel PbTe/ZnTe heterostructures.
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