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Ultraviolet Interband Plasmonics With Si Nanostructures.

Zhaogang Dong1, Tao Wang1,2, Xiao Chi3

  • 1Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis , 138634 Singapore.

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Summary

Silicon nanostructures exhibit localized plasmon resonances in the UV range. This study explores silicon

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Si nanostructuresSub-10 nmUV plasmonicsfield enhancementinterband plasmonicslocalized plasmon resonance

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Area of Science:

  • Plasmonics
  • Nanophotonics
  • Materials Science

Background:

  • Silicon (Si) is typically an electrical semiconductor but exhibits optical dielectric properties.
  • Its negative permittivity in the ultraviolet (UV) spectrum allows for plasmonic behavior.
  • Si plasmonics, especially in nanostructures, remains underexplored.

Purpose of the Study:

  • To investigate localized plasmon resonances in Si nanostructures.
  • To explore plasmon hybridization in Si nanostructures in the UV.
  • To examine hybrid Si-Al nanostructures for enhanced UV plasmonic properties.

Main Methods:

  • Fabrication and characterization of Si nanostructures.
  • Numerical simulations of plasmonic behavior.
  • Investigation of plasmon coupling in hybrid Si-Al nanostructures.

Main Results:

  • Observed localized plasmon resonances and plasmon hybridization in Si nanostructures at UV wavelengths (~250 nm).
  • Simulated Si nanodisk dimers achieving >500-fold local intensity enhancement in a 1 nm gap.
  • Demonstrated sharp UV resonances in hybrid Si-Al nanostructures due to plasmon coupling.

Conclusions:

  • Si nanostructures are viable for UV plasmonic applications.
  • Plasmon hybridization and coupling effects are significant in Si and Si-Al nanostructures.
  • Potential applications include UV spectral filtering, enhanced photodetectors, chirality sensing, and catalysis.