A Narrow-Bandgap n-Type Polymer Semiconductor Enabling Efficient All-Polymer Solar Cells

Shengbin Shi1, Peng Chen1, Yao Chen2

  • 1Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China.

Summary

A new narrow-bandgap polymer, DCNBT-IDT, offers improved n-type character for all-polymer solar cells (all-PSCs). This polymer overcomes limitations of existing materials, achieving higher efficiency and broader photoresponse in all-PSCs.

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