Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

2.9K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.9K
Valence Bond Theory02:42

Valence Bond Theory

11.1K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.1K
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.8K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.8K
Induced Electric Dipoles01:28

Induced Electric Dipoles

4.7K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
4.7K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

511
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
511
Fermi Level01:18

Fermi Level

1.5K
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
1.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Enhanced Ionic Conductivity at the Solid Electrolyte Interphase of Oxygen-Doped Li<sub>6</sub>PS<sub>5</sub>Cl.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Bridging <i>in situ</i> measurements and practical conditions through gas-liquid management for CO/CO<sub>2</sub> reduction.

Chemical communications (Cambridge, England)·2026
Same author

Therapeutic effect of intranasal nicotinamide adenine dinucleotide in the restoration of olfactory dysfunction.

Experimental & molecular medicine·2026
Same author

The developing tendon and enthesis are hypoxic and rely on hypoxia-inducible factor 1a during postnatal development.

Development (Cambridge, England)·2026
Same author

Visualizing Millisecond Atomic Dynamics of Nanocrystals in Liquid.

Journal of the American Chemical Society·2026
Same author

Beyond conventional CO<sub>2</sub> electroreduction: emerging paradigms for practical carbon conversion.

Chemical communications (Cambridge, England)·2026

Related Experiment Video

Updated: Jan 6, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K

Stable Subloop Behavior in Ferroelectric Si-Doped HfO2.

Kyoungjun Lee, Hyun-Jae Lee1, Tae Yoon Lee

  • 1School of Energy and Chemical Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Korea.

ACS Applied Materials & Interfaces
|October 3, 2019
PubMed
Summary
This summary is machine-generated.

Ferroelectric hafnium oxide (HfO2) offers stable, accessible multiple nonvolatile states crucial for neuromorphic computing. This breakthrough enables advanced analogue devices for next-generation computing architectures.

Keywords:
FeRAMHfO2analogue deviceferroelectricmultilevel

More Related Videos

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

9.2K
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.9K

Related Experiment Videos

Last Updated: Jan 6, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K
Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

9.2K
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.9K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Computational Materials Science

Background:

  • Neuromorphic applications demand analogue devices with tunable nonvolatile states.
  • Ferroelectric materials offer multiple polarization states for diverse neuromorphic architectures.
  • Conventional ferroelectrics face challenges in deterministic control and accessibility of polarization states.

Purpose of the Study:

  • To report on the stable accessibility and robust multi-state properties of ferroelectric HfO2.
  • To investigate the underlying mechanisms responsible for the stability of multiple polarization states in HfO2.
  • To demonstrate the potential of ferroelectric HfO2 for analogue device applications in neuromorphic computing.

Main Methods:

  • Experimental characterization including voltage measurements and temperature-dependent hysteresis analysis.
  • Advanced microscopy techniques such as piezoelectric force microscopy.
  • Computational modeling via first-principles calculations and Monte Carlo simulations.

Main Results:

  • Ferroelectric HfO2 exhibits unprecedented stable accessibility of multiple polarization states.
  • Intermediate polarization states in HfO2 demonstrate robust stability.
  • The stability is attributed to small critical nucleation volume and high activation energy for dipole flipping.

Conclusions:

  • Ferroelectric HfO2 presents a promising material for advanced analogue devices.
  • The unique properties of HfO2 pave the way for novel neuromorphic computing architectures.
  • This research overcomes accessibility issues in ferroelectric state control for practical applications.