Structure and magnetic properties of highly oriented LaBaCo2O5+δ films deposited on Si wafers with Pt/Ti buffer layer
Jamal Shaibo1, Rui Yang1, Zhe Wang1
1State Key Laboratory of Material Processing and Die & Mould Technology, Laboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
Abstract:
Fabrication of highly crystalline oxide films onto silicon wafers has long been a critical obstacle for integrating multi-functional oxides into silicon-based technology. Herein, Pt/Ti is used as a buffer layer for the integration of highly oriented crystalline LaBaCo2O5+δ (LBCO) thin films onto silicon via pulsed laser deposition. LBCO films are highly (00l) oriented with smooth and sharp LBCO/Pt interfaces. The highly oriented LBCO films exhibit a high magnetic transition temperature (TC) and large coercive field (HC) with superparamagnetism over those deposited on single crystal substrates. What is more, the metallic-like behavior with enhanced magnetoresistance is also observed. The opportunity of using a Pt/Ti buffer layer as the growth template opens an alternative route for integrating functional transition metal oxides with tunable magnetic properties into Si-based technology.
