Prestress-loading effect on the current-voltage characteristics of a piezoelectric p-n junction together with the...

A model is proposed to study the diffusion of non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current-voltage (I-V) characteristics of a piezoelectric p-n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward including two concepts: the influence of prestress loading on p-n junctions in a quasi-electrostatic thermal equilibrium and the perturbation of small fields superposed on the obtained quasi-electrostatic solutions. A few useful results are obtained through this loaded p-n junction model. Under a forward-bias voltage, a tensile (compressive) loading raises (reduces) the potential barrier of the space charge zone (SCZ), i.e., produces an equivalent reverse- (forward-) electric voltage on the SCZ. When a piezoelectric p-n junction is exposed to a reverse-bias voltage, the current density monotonically decreases with increasing reverse voltage and gradually approaches saturation. A bigger tensile (compressive) loading produces a smaller (larger) saturation current density. The appearance of an equivalent voltage on the SCZ induced by prestress indicates that the performance of a p-n junction with the piezo effect can be effectively tuned and controlled by mechanical loadings. Meanwhile, numerical results show that a loading location closer to the SCZ produces a stronger effect on the I-V characteristics of a piezoelectric p-n junction, implying that the tuning effect of mechanical loadings depends on how much influence of the deformation-induced electric field can reach the SCZ. Furthermore, it is also found that the deformation-induced electric field becomes weak with increasing doping because the higher doping is corresponding to the stronger electric leakage. Thus, the higher mechanical tuning performance on higher doped piezoelectric p-n junctions requires the prestress loadings to be applied closer to the interface of p- and n-zone. This study on a non-equilibrium process of piezoelectric p-n junctions has significance for piezotronics.