Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS₂

2D layers of metal dichalcogenides are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. 2D SnS₂ nanosheets with a bandgap of ≈2.6 eV have been attracting intensive attention as one potential candidate for modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth of large-size and high-quality SnS₂ atomic layers still remains a challenge. Herein, a salt-assisted chemical vapor deposition method is provided to synthesize atomic-layer SnS₂ with a large crystal size up to 410 µm and good uniformity. Particularly, the as-fabricated SnS₂ nanosheet-based field-effect transistors (FETs) show high mobility (2.58 cm² V^-1 s^-1 ) and high on/off ratio (≈10⁸ ), which is superior to other reported SnS₂ -based FETs. Additionally, the effects of temperature on the electrical properties are systematically investigated. It is shown that the scattering mechanism transforms from charged impurities scattering to electron-phonon scattering with the temperature. Moreover, SnS₂ can serve as an ideal material for energy storage and catalyst support. The high performance together with controllable growth of SnS₂ endow it with great potential for future applications in electrocatalysis, electronics, and optoelectronics.