Description of intermolecular charge transfer with subsystem density-functional theory
Anika Schulz1, Christoph R Jacob1
1Technische Universität Braunschweig, Institute of Physical and Theoretical Chemistry, Gaußstr. 17, 38106 Braunschweig, Germany.
The Journal of Chemical Physics
|October 10, 2019
Summary
This study introduces an improved subsystem density-functional theory (DFT) method to accurately model charge transfer in organic semiconductors. The new approach overcomes limitations in conventional DFT, enabling precise simulations of molecular interactions.
Area of Science:
- Computational Chemistry
- Materials Science
- Quantum Chemistry
Background:
- Accurate modeling of organic semiconductors requires methods that describe intermolecular charge transfer.
- Density-functional theory (DFT) struggles with charge transfer due to fractional charge errors in exchange-correlation (xc) functionals.
- Conventional supermolecular DFT fails for systems like tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ).
Purpose of the Study:
- To develop and validate an enhanced subsystem DFT approach for modeling intermolecular charge transfer.
- To address the fractional charge error inherent in approximate xc functionals.
- To enable accurate and efficient simulations of organic semiconductor materials.
Main Methods:
- Extension of subsystem DFT to handle subsystems with fractional electron numbers.
- Enforcement of correct energy dependence on fractional charge for each subsystem.
- Investigation of charge transfer in a TTF-TCNQ complex under an external electric field.
Main Results:
- The extended subsystem DFT successfully overcomes the fractional charge error.
- Accurate description of intermolecular charge transfer in the TTF-TCNQ model system is achieved.
- The method demonstrates potential for accurate modeling of larger molecular aggregates.
Conclusions:
- The presented subsystem DFT framework accurately captures intermolecular charge transfer.
- This approach provides a pathway for efficient and reliable modeling of organic semiconductors.
- The generalization of this method is crucial for advancing materials science simulations.
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