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Updated: Jan 5, 2026

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
High-Temperature Molecular Ferroelectric Tris(2-hydroxyethyl) Ammonium Bromide with Dielectric Relaxation
Zheng Tang1, Kai-Ge Gao2, Xiao-Fan Sun1
1Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures & School of Physics , Nanjing University , Nanjing 210093 , People's Republic of China.
Abstract:
We obtained one new molecular ferroelectric material tris(2-hydroxyethyl) ammonium bromide (TAB) that crystallizes in aqueous solution at room temperature with a space group of R3m which belongs to ten polar space groups. There is a paraelectric-to-ferroelectric phase transition at 424 K (from hexagonal R3̅m to hexagonal R3m phase). Such a high transition temperature is close to that of diisopropylamine bromide (426 K) and higher than that of many other molecular ferroelectrics, such as triethylmethylammonium tetrabromoferrate(III) (360 K); some of the organic-inorganic perovskite ferroelectrics, such as (cyclohexylammonium)2PbBr4 (363 K); and some inorganic ferroelectrics, including BaTiO3 (393 K). The saturated polarization and the coercive field of TAB measured from the ferroelectric hysteresis loop are about 0.54 μC·cm-2 and 0.62 kV/cm, respectively. Given its superior performance, including high phase transition temperature, room-temperature ferroelectricity, small coercive electric field, and adjustable ladder-shaped dielectric constant, TAB will have many potential applications.
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