Related Experiment Video
Updated: Jan 5, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Strong Thermopower Enhancement and Tunable Power Factor via Semimetal to Semiconductor Transition in a
Hongjae Moon1, Joonho Bang2, Seokkyoon Hong1
1Department of Materials Science and Engineering , Yonsei University , 50 Yonsei-ro , Seodaemoon-gu, Seoul 03722 , Republic of Korea.
Abstract:
Electronic band engineering is a promising approach to enhance the thermopower of thermoelectric materials. In transition-metal dichalcogenides (TMDCs), this has so far only been achieved using their inherent semiconducting nature. Here, we report the thickness-modulated band engineering of nanosheets based on semimetallic platinum diselenide (PtSe2) resulting in a thermopower enhancement of more than 50 times than that of the bulk. We obtained this by introducing a semimetal to semiconductor (SMSC) transition resulting in the formation of a bandgap. This approach based on semimetallic TMDCs provides potential advantages such as a large variation of transport properties, a decrease of the ambipolar transport effect, and a high carrier density dependence of the transport properties. Our observations suggest that the SMSC transition in TMDCs is a promising and straightforward strategy for the development of two-dimensional nanostructured thermoelectric materials.
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